| 高性能ZnO低压压敏电阻器的研制及产业化 |
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| 引用本文： | 唐斌,陈加旺,李强,岑权进,陈加增. 高性能ZnO低压压敏电阻器的研制及产业化[J]. 现代技术陶瓷, 2012, 0(3): 54-56 |
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| 作者姓名： | 唐斌 陈加旺 李强 岑权进 陈加增 |
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| 作者单位： | 湖北十堰东风汽车公司,十堰,442001 |
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| 摘 要： | 通过采用独特的Zn-Bi-Ti-Sn配方体系,并运用高温(800℃)烧银技术,可实现压敏电压低压化,并能很好解决低压极性问题。制得的产品其压敏场强约20V/mm左右,电压极性为1V以下,非线性系数大30以上,泄漏电流5μA以下,限制电压比约1.5(2.5A),芯片Φ10mm产品经1300A雷电流(8/20μS)冲击,压敏电压变化率为-3%左右,产品已实现产业化。
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| 关 键 词： | ZnO低压压敏陶瓷 Bi2O3,TiO2,SnO2掺杂 电性能 压敏场强 |
Study and Industrialization on High Performance Low Voltage ZnO Varistor |
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| Tang Bin Chen Jiawang Li Qiang Cen Quanjin Chen Jiazeng. Study and Industrialization on High Performance Low Voltage ZnO Varistor[J]. Advanced Ceramics, 2012, 0(3): 54-56 |
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| Authors: | Tang Bin Chen Jiawang Li Qiang Cen Quanjin Chen Jiazeng |
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| Affiliation: | Tang Bin Chen Jiawang Li Qiang Cen Quanjin Chen Jiazeng (Guangdong Fenghua Advanced Technology (Group) Co.,LTD,Shi Yan 526020) |
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| Abstract: | The low voltage and voltage polarity problems were solved by using a unique Zn-Bi-Ti-Sn formula system and firing silver technology of 850℃. Obtained products have following advantages:voltage gradient(20V/mm),voltage polarity(<1V),nonlinear coefficent(>30),leakage current(<5μA),clamp voltage ratio(1.5,2.5A).The devices of Φ10mm chip have a peak lightning current(1300A,8/20μS), the varistor voltage change ratio(-3%).The products were achieved industrialization. |
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| Keywords: | low voltage ZnO varistor Bi2O3, TiO2, SnO2 doping electrical properties voltage gradient |
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