The effect of Cu addition on the thermoelectric properties of Cu2CdGeSe4 |
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| Affiliation: | 1. Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore 560012, India;2. Institute of Materials Research, German Aerospace Center (DLR), D-51170 Köln, Germany;3. Justus Liebig University Giessen, Institute of Inorganic and Analytical Chemistry, Heinrich-Buff-Ring 58, D-35392 Giessen, Germany;1. School of Physics and Electronics Information, Hubei University of Education, Wuhan 430205, China;2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;1. Department of Chemistry, National Institute of Technology Karnataka, Surathkal, Mangalore - 575025, India;2. Department of Chemistry, College of Engineering and Technology, Srinivas University, Mukka, Mangalore - 574146, India;1. Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 80424, Taiwan;2. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan;1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;3. Materials Genome Institute, Shanghai University, Shanghai 200444, China;4. Centre for Future Materials, The University of Southern Queensland, Springfield, Queensland 4300, Australia;5. CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;2. International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China;3. Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China |
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| Abstract: | Recently, research in copper based quaternary chalcogenide materials has focused on the study of thermoelectric properties due to the complexity in the crystal structure. In the present work, stoichiometric quaternary chalcogenide compounds Cu2+xCd1−xGeSe4 (x = 0, 0.025, 0.05, 0.075, 0.1, 0.125) were prepared by solid state synthesis. The powder X-ray diffraction patterns of all the samples showed a tetragonal crystal structure with the space group I-42m of the main phase, whereas the samples with x = 0 and x = 0.025 revealed the presence of an orthorhombic phase in addition to the main phase as confirmed by Rietveld analysis. The elemental composition of all the samples characterized by Electron Probe Micro Analyzer showed a slight deviation from the nominal composition. The transport properties were measured in the temperature range of 300 K–723 K. The electrical conductivity of all the samples increased with increasing Cu content due to the enhancement of the hole concentration caused by the substitution of Cd (divalent) by Cu (monovalent). The positive Seebeck coefficient of all the samples in the entire temperature ranges indicates that holes are the majority carriers. The Seebeck coefficient of all the samples decreased with increasing Cu content and showed a reverse trend to the electrical conductivity. The total thermal conductivity of all the samples decreased with increasing temperature which was dominated by the lattice contribution. The maximum figure of merit ZT = 0.42 at 723 K was obtained for the compound Cu2.1Cd0.9GeSe4. |
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| Keywords: | B. Annealing B. Thermoelectric properties D. Microstructure F. X-ray diffraction F. Scanning electron microscopy |
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