| 电力电子开关器件仿真模型分析和比较 |
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| 引用本文： | 张薇琳,张波,丘东元.电力电子开关器件仿真模型分析和比较[J].电气应用,2007,26(9):64-67. |
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| 作者姓名： | 张薇琳 张波 丘东元 |
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| 作者单位： | 华南理工大学电力学院,510640 |
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| 摘 要： | 对电力电子开关器件如二极管、GTO、晶闸管、MOSFET和IGBT的现有仿真模型进行了归纳和总结,并比较了各种器件不同模型之间的优缺点和适用场合,由此为电力电子开关器件的分析提供研究基础.
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| 关 键 词： | 功率二极管 GTO 晶闸管 MOSFET IGBT 仿真模型 |
Analysis and Comparison of Power Electronic Devices Models |
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| Zhang Weilin.Analysis and Comparison of Power Electronic Devices Models[J].Electrotechnical Application,2007,26(9):64-67. |
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| Authors: | Zhang Weilin |
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| Affiliation: | South China University of Technology |
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| Abstract: | Simulation models of power electronic devices, including power diode, GTO, thyristor, MOSFET and IGBT are presented. Their basic principles are descr ibed and their merits and limitations are remarked. |
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| Keywords: | Simulation models of power electronic devices including power diode GTO thyristor MOSFET and IGBT are presented Their basic principles are descr ibed and their merits and limitations are remarked |
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