| 高性能纵向pnp晶体管的研制 |
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| 引用本文： | 王界平,王清平.高性能纵向pnp晶体管的研制[J].微电子学,1993,23(1):6-10,14. |
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| 作者姓名： | 王界平 王清平 |
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| 作者单位： | 机电部第24研究所 重庆永川630060
(王界平，王清平)，机电部第24研究所 重庆永川630060(龙弟光) |
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| 摘 要： | pnp晶体管中由于空穴的迁移率较电子的迁移率低得多,再加上纵向pnp管有比npn管严重得多的基区宽度调变效应,一般情况下,难以使纵向pnp管的性能与npn管的性能相媲美。我们从理论上分析了提高纵向pnp管性能的途径,并设计了一套新的工艺流程。在p型外延材料上研制出了BV_(ceo)≥90V、V_(be)≤0.8V、f_T=900MHz、V_(ces)=0.2V、β=60～150、厄利电压大于150V的纵向pnp晶体管。在P型单晶材料上研制出了BV_(ceo)≥65V、f_T≥560MHz、β=60～150的纵向pnp晶体管。具有这种性能的纵向pnp管目前在国内外还很少见。
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| 关 键 词： | 高频晶体管 高压晶体管 肖特基势垒 |
The Fabrication of a High Performance Vertical p-n-p Transistors |
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| Wang Jieping,Wang Qingping and Long Diguang
Sichuan Institute of Solid-State Circuits,Chongqing,Sichuan.The Fabrication of a High Performance Vertical p-n-p Transistors[J].Microelectronics,1993,23(1):6-10,14. |
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| Authors: | Wang Jieping Wang Qingping and Long Diguang
Sichuan Institute of Solid-State Circuits Chongqing Sichuan |
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| Affiliation: | Wang Jieping,Wang Qingping and Long Diguang
Sichuan Institute of Solid-State Circuits,630060,Chongqing,Sichuan |
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| Abstract: | p-n-p transistiors, in general, could hardly be comparable in performance to n-p-n transistors. In this paper, approaches to improve the performance of vertical p-n-p transistors are theoretically analyzed and a new set of process steps is designed. Vertical p-n-p transistors with BFceo>90V, Vhe<0. 8V,fr=900MHz,Vcen= 0. 2V,B=60~ 150 and Early voltage>150V have been obtained on the p-type epilayer. And vertical p-n-p transistors with BVcea> 65V,B=60-150 and fr>560MHz have been fabricated on the p-type crystalline layers. The new fabrication process for this high performance vertical p-n-p transistors is also described. |
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| Keywords: | Vertical p-n-p transistor High frequency transistor High voltage transistor Schottky barrier |
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