Preparation and electrochemical capacitance of MnO2 thin films doped by CuBi2O4

Manganese dioxide (MnO₂) and CuBi₂O₄-doped MnO₂ thin films with different nanostructures were deposited on indium tin oxide (ITO) glass and Ti foil substrates by using a chemical bath deposition (CBD) technique. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron microscopy (XPS). The effects of doping and substrates on electrochemical properties of MnO₂ and CuBi₂O₄-doped MnO₂ thin films on ITO glass and Ti foil were investigated. Capacitive properties of MnO₂ and CuBi₂O₄-doped MnO₂ thin films electrodes were studied using cyclic voltammetry and electrochemical impedance spectroscopy in a three-electrode experimental setup using 0.1 M Na₂SO₄ aqueous solution as electrolyte. Specific capacitance, obtained from electrochemical measurement for the CuBi₂O₄-doped MnO₂, exhibited a higher value of 338 F g^?1 compared to the MnO₂ exhibiting value of 135 F g^?1. In addition, CuBi₂O₄-doped MnO₂ thin films on an ITO electrode had a better and satisfactory specific capacitance value, and exhibited more excellent electrochemical stability and reversibility than Ti foil substrates.