Rapid thermal annealing of cerium dioxide thin films sputtered onto silicon (111) substrates: Influence of heating rate on microstructure and electrical properties |
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| Affiliation: | 1. Normandie Université, UCBN, LUSAC, EA 4253, Site Universitaire, BP 78, 50130 Cherbourg-Octeville, France;2. Normandie Université, UCBN, CRISMAT Lamips, U.M.R. – C.N.R.S. 6508, 6 Boulevard Maréchal Juin, F 14050 Caen Cedex 4, France;3. Normandie Université, UCBN, LCS, U.M.R. – C.N.R.S. 6506, 6 Boulevard Maréchal Juin, 14000 Caen Cedex 4, France;4. IEMN, U.M.R. – C.N.R.S. 8520, Department Hyperfréquences et Semiconductors, Université des Sciences et Technologies de Lille, 59652 Villeneuve d׳Ascq Cedex, France;1. New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen, Czech Republic;2. Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis, Malaysia;1. Ostim Vocational School, Gazi University, 06500 Ankara, Turkey;2. Department of Physics, Faculty of Sciences, Ataturk University,25240 Erzurum, Turkey;3. Department of Physics Engineering, Faculty of Sciences, Istanbul Medeniyet University,34700 Istanbul, Turkey;1. Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria;2. Institute of Electronics, Bulgarian Academy of Sciences, blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria |
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| Abstract: | The impact of the heating rate (HR) of a Rapid Thermal Annealing (RTA) on the crystallinity and on the morphology of CeO2 thin films has been investigated by Raman Spectroscopy (RS), Photoluminescence (PL), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), and tapping mode Atomic Force Microscopy (AFM). The electrical properties of CeO2 thin films have also been studied with the Conductive AFM mode. This paper highlights the importance of the heating rate value used during an RTA on crystalline quality, morphology and on the electrical properties of the CeO2 layer. In fact, the best crystallinity with a good morphology and a high resistivity has been obtained for a CeO2 layer sputtered on (111) Si substrate and post-annealed at 1000 °C for 30 s with an HR of 25 °C/s. |
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| Keywords: | Thin films Cerium oxide Rapid thermal annealing Heating rate CAFM PL |
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