Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes |
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| Affiliation: | 1. Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria;2. Institute of Electronics, Bulgarian Academy of Sciences, blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria;1. Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México. A.P. 70-360, Coyoacán, C.P. 04510 México, D.F., Mexico;2. Grupo de Investigación en Desarrollo Tecnológico, Mecatrónica y Agroindustria (GIDETECHMA), Facultad de Ingeniería Mecánica, Universidad Pontificia Bolivariana de Bucaramanga. Km. 7 via a Piedecuesta, Floridablanca, Colombia;3. Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional, Av. I.P.N. 2580, Gustavo A. Madero, 07340 México, D.F., Mexico;4. Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio, TX 78249, USA;5. Departamento de Física, Universidad Autónoma Metropolitana, AP 55-534, CP 09340 México, D.F., Mexico;6. Departamento de Física, Centro de Investigación y Estudios Avanzados del IPN, CP 07360, México, D.F., Mexico;1. Technical Inspection Engineering Department, Petroleum University of Technology, Abadan, Iran;2. Health, Safety and Environment (HSE) Engineering Office, NIOPDC, Yazd Region, Yazd 89167-84395, Iran;3. Department of Materials Engineering, Malek Ashtar University of Technology, ShahinShahr, Isfahan, Iran;4. Adjunct Professor, COMSATS University, Lahore, Pakistan;5. Prof Emeritus, KFUPM, Dhahran, Saudi Arabia;1. Nanomaterials Research Laboratory (NRL), Department of Applied Sciences, Chitkara University, Rajpura 140401, Punjab, India;2. Punjab Technical University (PTU), Jalandhar 144601, India;3. Department of Physics, Panjab University, Chandigarh 160014, India;4. Department of Physics, G.G.D.S.D. College, Sector-32 C, Chandigarh 160030, India;1. Department of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;2. Department of Electronics Engineering, Feng-Chia University, Taichung, Taiwan, ROC |
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| Abstract: | All RF sputtering-deposited Pt/SiO2/n-type indium gallium nitride (n-InGaN) metal–oxide–semiconductor (MOS) diodes were investigated before and after annealing at 400 °C. By scanning electron microscopy (SEM), the thickness of Pt, SiO2, n-InGaN layer was measured to be ~250, 70, and 800 nm, respectively. AFM results also show that the grains become a little bigger after annealing, the surface topography of the as-deposited film was smoother with the rms roughness of 1.67 nm and had the slight increase of 1.92 nm for annealed sample. Electrical properties of MOS diodes have been determined by using the current–voltage (I–V) and capacitance–voltage (C–V) measurements. The results showed that Schottky barrier height (SBH) increased slightly to 0.69 eV (I–V) and 0.82 eV (C–V) after annealing at 400 °C for 15 min in N2 ambient, compared to that of 0.67 eV (I–V) and 0.79 eV (C–V) for the as-deposited sample. There was the considerable improvement in the leakage current, dropped from 6.5×10?7 A for the as-deposited to 1.4×10?7 A for the 400 °C-annealed one. The annealed MOS Schottky diode had shown the higher SBH, lower leakage current, smaller ideality factor (n), and denser microstructure. In addition to the SBH, n, and series resistance (Rs) determined by Cheungs? and Norde methods, other parameters for MOS diodes tested at room temperature were also calculated by C–V measurement. |
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| Keywords: | MOS Schottky diode SBH Leakage current Cheung?s and Norde method |
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