Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer |
| |
| Affiliation: | 1. Beijing Key Laboratory of New and Renewable Energy, North China Electric Power University, Beijing 102206, China;2. Beijing Key Laboratory of Multiphase Flow and Heat Transfer for Low Grade Energy, North China Electric Power University, Beijing 102206, China;1. School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia.;2. Faculty of Technology of São Paulo, São Paulo, Brazil;1. Department of Physics & I3N, University of Aveiro, 3810-193 Aveiro, Portugal;2. Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’énergie, BP95, Hammam-Lif 2050, Tunisia;3. Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91 460 Marcoussis, France;2. Department of Physics, Arab-American University, Jenin, Palestine;3. Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;1. Institute of Physics, Faculty of Natural Sciences and Mathematics, Ss Cyril and Methodius University, Arhimedova 3, 1000 Skopje, Macedonia;2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria;1. Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia;2. LUNAM, Université de Nantes, Moltech Anjou, CNRS, UMR 6200, FSTN, 2 Rue de la Houssinière, BP 92208, Nantes F-44322, France;1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan;2. Electronic Materials Research Lab, School of Engineering, James Cook University, Townsville, QLD 4811, Australia;1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;2. Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan |
| |
| Abstract: | In this study, a trapezoidal-shaped electron blocking layer is proposed to improve efficiency droop of InGaN/GaN multiple quantum well light-emitting diodes. The energy band diagram, carrier distribution profile, electrostatic field, and electron current leakage are systematically investigated between two light-emitting diodes with different electron blocking layer structures. The simulation results show that, when traditional AlGaN electron blocking layer is replaced by trapezoidal-shaped electron blocking layer, the electron current leakage is dramatically reduced and the hole injection efficiency in markedly enhanced due to the better polarization match, the quantum-confined Stark effect is mitigated and the radiative recombination rate is increased in the active region subsequently, which are responsible for the alleviation of efficiency droop. The optical performance of light-emitting diodes with trapezoidal-shaped electron blocking layer is significantly improved when compared with its counterpart with traditional AlGaN electron blocking layer. |
| |
| Keywords: | Light-emitting diodes Electron blocking layer Efficiency droop Electron leakage |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
