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A novel SOI-MESFET structure with double protruded region for RF and high voltage applications
Affiliation:1. Nanomaterials Research Laboratory (NRL), Department of Applied Sciences, Chitkara University, Rajpura 140401, Punjab, India;2. Punjab Technical University (PTU), Jalandhar 144601, India;3. Department of Physics, Panjab University, Chandigarh 160014, India;4. Department of Physics, G.G.D.S.D. College, Sector-32 C, Chandigarh 160030, India;1. Department of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;2. Department of Electronics Engineering, Feng-Chia University, Taichung, Taiwan, ROC;1. Department of Physics, Sakarya University, 54187 Sakarya, Turkey;2. Materials Science and Engineering Department, Sakarya University, 54687 Sakarya, Turkey;3. Department of Physics, Yildiz Technic University, 34212 Istanbul, Turkey;4. Department of Physics, Gebze Institute of Technology, 41410 Kocaeli, Turkey;5. Fatih Sultan Mehmet Vakif University, Faculty of Engineering, 34445 Istanbul, Turkey;6. Council of Forensic Medicine, Department of Physics, 34196 Istanbul, Turkey
Abstract:
Keywords:SOI MESFET  Breakdown voltage  Maximum output power density  RF characteristics
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