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Uniform 3D hydrothermally deposited zinc oxide nanorods with high haze ratio
Affiliation:1. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea;2. College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;3. Department of Physics, Institute of Basic Science, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea;4. Department of Electrical Engineering (SEES), CINVESTAV-IPN, Ave Politecnico #2508, Col San Pedro Zacatenco, D.F. Mexico CP 07360, Mexico;5. Department of Physics, COMSATS Institute of Information and Technology, Lahore 54000, Pakistan;1. Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D. F., C.P 07360, Mexico;2. Institute of Molecules and Materials, UMR-CNRS 6283, Universite du Maine, Avenue O. Messiaen, F-72085 Le Mans, France;3. Department of Physics, Colorado School of Mines, Golden, CO 80401, United States;4. Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401, United States;1. Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Ex–Hacienda de San Juan Molino. Km. 1.5. Tepetitla, Tlaxcala 90700, México;2. Universidad del Valle de Puebla, 3 Sur No. 5759. Col. El Cerrito. Puebla, Puebla 72440, México;3. Departamento de Ingeniería Eléctrica, SEES, CINVESTAV-IPN, Apartado Postal 14-740. México, D. F. 07000, México;4. Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, 14 Sur y Av. San Claudio Edif. 103C, Ciudad Universitaria, Col. San Manuel, Puebla, Puebla 72570, México;5. Unidad Profesional Interdisciplinaria de Biotecnología del Instituto Politécnico Nacional, Avenida Acueducto S/N, Col. Barrio la Laguna, Ticomán, México, D.F. 07340, México;1. V. Lashkaryov Institute of Semiconductor Physics at NAS of Ukraine, pr. Nauki 41, C.P., 03028 Kiev, Ukraine;2. Instituto Politécnico Nacional – ESFM, Department of Physics, Av. IPN, Ed. 9, U.P.A.L.M., C.P., 07738 Mexico D.F., Mexico;3. Instituto Politécnico Nacional – ESIME Zacatenco, Av. IPN, Ed. Z4, U.P.A.L.M., 07738 Mexico D.F., Mexico;1. Facultad de Química, Materiales, Universidad Autónoma de Querétaro, Querétaro 76010, México;2. Centro de Ivestigación en Materiales Avanzados S.C. (CIMAV), Miguel de Cervantes 120, 31109 Chihuahua, CHIH, Mexico;3. Instituto de Energías Renovables, UNAM, 62580 Temixco, Morelos, México;1. Centro de Investigación y Estudios Avanzados del IPN, Departamento de Ingeniería, Eléctrica, Sección de Electrónica del Estado Sólido (SEES), Ciudad de México, MX 07360, México;2. Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Puebla, PU 72840, México;3. Instituto Politécnico Nacional, Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), México, MX 07738, México
Abstract:We present low cost hydrothermally deposited uniform zinc oxide (ZnO) nanorods with high haze ratios for the a-Si thin film solar cells. The problem of low transmittance and conductivity of hydrothermally deposited ZnO nanorods was overcome by using RF magnetron sputtered aluminum doped zinc oxide (ZnO:Al ~300 nm) films as a seed layer. The length and diameters of the ZnO nanorods were controlled by varying growth times from 1 to 4 h. The length of the ZnO nanorods was varied from 1 to 1.5 µm, while the diameter was kept larger than 300 nm to obtain various aspect ratios. The uniform ZnO nanorods showed higher transmittance (~89.07%) and haze ratio in the visible wavelength region. We also observed that the large diameters (>300 nm) and average aspect ratio (3–4) of ZnO nanorods favored the light scattering in the longer wavelength region. Therefore, we proposed uniformly deposited ZnO nanorods with high haze ratio for the future low cost and large area amorphous silicon thin film solar cells.
Keywords:Light scattering  ZnO nanorods  Hydrothermal process  Aspect ratio  a-Si thin film solar cell
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