Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors |
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| Affiliation: | 1. Department of Materials Science, Shanghai University, Shanghai 200072, China;2. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072, China;3. Department of Chemistry and Centre for Self-Assembled Chemical Structures, McGill University, 801 Sherbrooke Street West, Montreal, QC, Canada H3A 2K6;1. School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia.;2. Faculty of Technology of São Paulo, São Paulo, Brazil;1. Department of Physics & I3N, University of Aveiro, 3810-193 Aveiro, Portugal;2. Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’énergie, BP95, Hammam-Lif 2050, Tunisia;3. Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91 460 Marcoussis, France;1. Joint Institute for High Temperatures of the Russian Academy of Science, Izhorskaya Str., 13, Build. 2, 125412 Moscow, Russian Federation;2. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Shosse, 31, 115409 Moscow, Russian Federation;1. Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;2. School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510274, China;3. Infovision Optoelectronics (Kunshan) Co., Ltd, Kunshan 215300, China;1. Department of Materials Science, Shanghai University, Shanghai 200072, China;2. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072, China;1. Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea;2. School of Integrated Technology, Yonsei University, Incheon 21983, Republic of Korea;3. Department of Advanced Materials Science and Engineering, Hanbat National University, Daejeon 34158, Republic of Korea;4. Biosystems Machinery Engineering, Chungnam National University, Daejeon 34134, Republic of Korea;5. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea |
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| Abstract: | Top-contact thin-film transistors (TFTs) are fabricated in this work using atomic layer deposition (ALD) Al2O3 as the gate insulator and radio frequency sputtering InGaZnO (IGZO) as the channel layer so as to investigate the effect of Al2O3 thickness on the performance of IGZO-TFTs. The results show that TFT with 100-nm-thick Al2O3 (100 nm-Al2O3-TFT) exhibits the best electrical performance; specifically, field-effect mobility of 5 cm2/Vs, threshold voltage of 0.95 V, Ion/Ioff ratio of 1.1×107 and sub-threshold swing of 0.3 V/dec. The 100 nm-Al2O3-TFT also shows a substantially smaller threshold voltage shift of 1.1 V after a 10 V gate voltage is applied for 1 h, while the values for TFTs with an Al2O3 thickness of 220 and 280 nm are 1.84 and 2 V, respectively. The best performance of 100 nm-Al2O3-TFT can be attributed to the larger capacitance and the smaller amount of total trap centers possessed by a thinner insulator compared to the thicker ones. |
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| Keywords: | IGZO thin-film transistors Different thicknesses Bias stability |
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