AlN/GaN/AlN heterostructures grown on Si substrate by plasma-assisted MBE for MSM UV photodetector applications |
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| Affiliation: | 1. Department of Applied Sciences, Universiti Teknologi MARA (Pulau Pinang), 13500 Permatang Pauh, Penang, Malaysia;2. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;3. Universiti Kuala Lumpur, Malaysian Institute of Industrial Technology (MITEC), Persiaran Sinaran Ilmu, Bandar Seri Alam, 81750 Johor, Malaysia;4. Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Malaysia;1. School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia.;2. Faculty of Technology of São Paulo, São Paulo, Brazil;1. Nigde, Ömer Halisdemir University, Mecatronic Department, Turkey;2. Gazi University, Physics Department, Turkey;1. Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia;2. LUNAM, Université de Nantes, Moltech Anjou, CNRS, UMR 6200, FSTN, 2 Rue de la Houssinière, BP 92208, Nantes F-44322, France;1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;2. Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan;1. Department of Physics & I3N, University of Aveiro, 3810-193 Aveiro, Portugal;2. Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’énergie, BP95, Hammam-Lif 2050, Tunisia;3. Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91 460 Marcoussis, France |
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| Abstract: | The AlN/GaN/AlN heterostructures were successfully grown on silicon substrate by plasma-assisted molecular beam epitaxy (MBE). High purity gallium (7N) and aluminum (6N5) were used to grow GaN and AlN, respectively. The structural and optical properties of the samples have been investigated by high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL), Raman spectroscopy, transmission electron microscopy (TEM), selected area electron diffraction (SAED), dark field scanning transmission electron microscopy (DF STEM), and high-angle annular dark field scanning transmission electron microscopy (HAADF STEM). HR-XRD measurement showed that the sample has a typical diffraction pattern of hexagonal AlN/GaN/AlN heterostructures. Raman spectra revealed all four Raman-active modes, i.e., GaN-like E2 (H), AlN-like A1 (TO), AlN-like E2 (H), and AlN-like A1 (LO) inside the AlN/GaN/AlN heterostructures. Good thickness uniformity of the layers and high-quality hetero-structures without cracking were confirmed by TEM, SAED, DF STEM and HAADF STEM. The fabricated AlN/GaN/AlN heterostructures based metal-semiconductor-metal (MSM) for the UV photodetector shows a rise and fall of photoresponses, suggesting that the AlN/GaN/AlN heterostructures have good carrier transport and crystallinity properties. |
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| Keywords: | AlN MBE XRD III-Nitride Silicon |
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