Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate |
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| Affiliation: | 1. School of Science, Jiangnan University, Wuxi 214122, China;2. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;3. Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;1. Dokuz Eylul University, Faculty of Sciences, Physics Department, 35160 Buca, Izmir, Turkey;2. Yuzuncu Yil University, Faculty of Sciences, Physics Department - Zeve Campus, 65100 Van, Turkey;3. Adnan Menderes University, Faculty of Arts and Sciences, Physics Department, 09100 Aytepe, Aydin, Turkey;1. Science School, Xi’an University of Technology, Xi’an 710048, People’s Republic of China;2. School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, People’s Republic of China;1. lia State University, Cholokashvili Ave. 3-5, 0162 Tbilisi, Georgia;2. Institute of Micro and Nano Electronics, Chavchavadze Ave. 13, 0179 Tbilisi, Georgia;3. Semiconductor Nanoelectronics, Peter Grünberg Institut PGI, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany;4. Transilvania University of Brasov, Faculty of Electrical Engineering and Computer Science, Electronics and Computer Department, 1 Politehnicii,500024 Brasov, Romania;5. Georgian Technical University, 77 Kostava Str., Tbilisi 0175, Georgia;1. Department of Physics, COMSATS Institute of Information Technology , 44000 Islamabad, Pakistan;2. Department of Physics Simulation Lab, the Islamia University of Bahawalpur, 63100, Pakistan;3. Department of Electrical and Computer Engineering and MINT Center, The University of Alabama, Tuscaloosa, AL 35487, USA;4. Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan;5. Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore, Pakistan;6. National Centre for Physics, Islamabad, Pakistan |
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| Abstract: | GaN-based blue light-emitting diodes (LEDs) on various patterned sapphire substrates (PSSs) are investigated in detail. Hemispherical and triangular pyramidal PSSs have been applied to improve the performance of LEDs compared with conventional LEDs grown on planar sapphire substrate. The structural, electrical, and optical properties of these LEDs are investigated. The leakage current is related to the crystalline quality of epitaxial GaN films, and it is improved by using the PSS technique. The light output power and emission efficiency of the LED grown on triangular pyramidal PSS with optimized fill factor show the best performance in all the samples, which indicates that the pattern structure and fill factor of the PSS are related to the capability of light extraction. |
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| Keywords: | InGaN/GaN Light-emitting diodes׳ Patterned sapphire substrate |
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