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CO2 detection with CNx thin films deposited on porous silicon
Affiliation:1. Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), 02 Bd, Frantz Fanon, B.P. 140, Algiers, Algeria;2. CDTA, Houche-Oukil, BP.17, Baba Hassen, Algiers, Algeria;3. USTHB, BP 32, 16123 Bab-Ezzouar Algiers, Algeria;1. School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia.;2. Faculty of Technology of São Paulo, São Paulo, Brazil;1. Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, South Korea;2. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793, South Korea;3. Department of Electronic Engineering, Hanyang University, Seoul 133-791, South Korea;1. Department of Physics & I3N, University of Aveiro, 3810-193 Aveiro, Portugal;2. Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’énergie, BP95, Hammam-Lif 2050, Tunisia;3. Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91 460 Marcoussis, France;1. School of Science, Jiangnan University, Wuxi 214122, China;2. China Electronics Technology Group Corporation No. 38 Research Institute, Hefei 230088, China;3. Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;2. Department of Physics, Arab-American University, Jenin, Palestine;3. Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;1. Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong Special Administrative Region;2. Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, PR China
Abstract:In recent years, porous silicon (PSi) has attracted a great deal of attention for sensing applications. However, the high reactivity of PSi surfaces causes serious problems of stability. In this work, we developed new thin films that can serve as stabilizer of PSi for CO2 gas sensors development. PSi surface was coated with carbon nitride (CNx) film which is one of the most important interfering to stabilize the PSi layer. CNx film was deposited by pulsed laser ablation. The effect of CO2 gas on the sensor response was investigated for different polarization voltages. The electrical properties of (Al/CNx/PSi/Si) structure were modified in the presence of the gas. The device shows a high sensitivity against CO2 gas. Furthermore, the current variation of the sensor as a function of time has been investigated. The results show that the Al/CNx/PSi/Si structure becomes stable after the first two weeks.
Keywords:Gas sensing  Thin films  Pulsed laser deposition  Carbon nitride  Porous silicon
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