Highly thermally conductive POSS-g-SiCp/UHMWPE composites with excellent dielectric properties and thermal stabilities |
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| Affiliation: | 1. MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary Conditions, Shaanxi Key Laboratory of Macromolecular Science and Technology, Department of Applied Chemistry, School of Science, Northwestern Polytechnical University, Xi''an, Shaanxi, 710072, PR China;2. AVIC the First Aircraft Institute, Yanliang, Shaanxi, 710089, PR China;3. Queen Mary University of London Engineering School, Northwestern Polytechnical University, Xi''an, Shaanxi, 710072, PR China;4. Institute of Intelligence Material and Structure, Unmanned System Research Institute, Northwestern Polytechnical University, Xi''an, Shaanxi, 710072, PR China;1. College of Chemistry and Chemical Engineering, Xi’an University of Science & Technology, Xi’an 710054, China;2. Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin 150080, China;1. Department of Applied Chemistry, School of Science, Shaanxi Key Laboratory of Macromolecular Science and Technology, Northwestern Polytechnical University, Xi''an, 710072, China;2. State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China;1. Faculty of Printing, Packaging Engineering and Digital Media Technology, Xi’an University of Technology, Xi’an, Shaanxi 710048, People’s Republic of China;2. Key Laboratory for Special Area Highway Engineering of Ministry of Education, Chang’an University, Xi’an 710064, Shaanxi, People’s Republic of China;3. State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, People’ Republic of China |
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| Abstract: | Polyhedral oligomeric silsesquioxane grafting thermally conductive silicon carbide particle (POSS-g-SiCp) fillers, are performed to fabricate highly thermally conductive ultra high molecular weight polyethylene (UHMWPE) composites combining with optimal dielectric properties and excellent thermal stabilities, via mechanical ball milling followed by hot-pressing method. The POSS-g-SiCp/UHMWPE composite with 40 wt% POSS-g-SiCp exhibits relative higher thermal conductivity, lower dielectric constant and more excellent thermal stability, the corresponding thermally conductive coefficient of 1.135 W/mK, the dielectric constant of 3.22, and the 5 wt% thermal weight loss temperature of 423 °C, which holds potential for packaging and thermal management in microelectronic devices. Agari’s semi-empirical model fitting reveals POSS-g-SiCp fillers have strong ability to form continuous thermally conductive networks. |
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| Keywords: | A. Polymer-matrix composites (PMCs) B. Thermal properties D. Mechanical testing E. Compression moulding |
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