The effect of temperature on the growth and properties of green light-emitting In0.5Ga0.5N films prepared by reactive sputtering with single cermet target |
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| Affiliation: | 1. Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;2. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;1. School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia.;2. Faculty of Technology of São Paulo, São Paulo, Brazil;1. Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China;2. School of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710032, China;3. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;1. Department of Electronics, National Polytechnic Institute, 07738 Distrito Federal, Mexico, Mexico;2. Electronic Materials Research Group, School of Materials & Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia;2. Department of Physics, Arab-American University, Jenin, Palestine;3. Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey |
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| Abstract: | We have grown In0.5Ga0.5N films on SiO2/Si (100) substrate at 100–400 °C for 90 min by rf reactive sputtering with single cermet target. The target was made by hot pressing the mixture of metallic indium, gallium and ceramic gallium nitride powder. X-ray diffraction (XRD) measurements indicated that In0.5Ga0.5N films had wurtzite structure and showed the preferential (1 0 -1 0) diffraction. Both SEM and AFM showed that In0.5Ga0.5N films were smooth and had small roughness of 0.6 nm. Optical properties were measured by photoluminescence (PL) spectra from room temperature to low temperature of 20 K. The 2.28 eV green emission was achieved at room temperature for all our InGaN films. The electrical properties of In0.5Ga0.5N films on a SiO2/Si (100) substrate were measured by the Hall measurement at room temperature. InGaN films showed the electron concentration of 1.51×1020–1.90×1020 cm−3 and mobility of 5.94–10.5 cm2 V−1 s−1. Alloying of InN and GaN was confirmed for the sputtered InGaN. |
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| Keywords: | InGaN Sputtering Thin film Electrical property |
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