Optimization of the nanopore depth to improve the electroluminescence for GaN-based nanoporous green LEDs |
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| Affiliation: | 1. Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an, Shaanxi 710072, PR China;2. School of Science, Xi''an Polytechnic University, Xi’an, Shaanxi 710048, PR China;3. State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, Northwestern Polytechnical University and Shaanxi Joint Lab of Graphene (NPU), Xi''an 710072, PR China;1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea;2. Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul 120-749, Republic of Korea;3. School of Materials Science and Engineering, Yeungnam University, 214-1 Dae-dong, Gyeongsan-si 712-749, Republic of Korea;1. Department of Energy Systems Engineering, Engineering Faculty, Güre Campus, 28200, Giresun, Turkey;2. Department of Physics, Faculty of Arts and Sciences, Giresun University, Gazipaşa Campus, 28100 Giresun, Turkey;1. Institute of Physics, Nanotechnology and Telecommunications, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, St. Petersburg 195251, Russia;2. St. Petersburg Academic University, Khlopina 8/3, St. Petersburg 194021, Russia;3. Institute of Problems of Mechanical Engineering RAS, Bolshoj pr. V.O. 61, St. Petersburg 199178, Russia;4. Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, P.O. Box 111, Joensuu 80101, Finland |
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| Abstract: | GaN-based nanoporous green LEDs with different pore depth have been fabricated by using anodic aluminum oxide (AAO) as dry etching mask. The experimental results show that the electrical properties of the nanoporous LEDs with different pore depths are similar, but for the optical properties, the LEDs with nanopores extended to the p-GaN layer exhibits the best performance, if increase the depth to MQWs or decrease to the ITO layer will both decrease the light output power (LOP). By calculating the light extraction efficiency using three-dimensional (3D) finite-difference time-domain method, the decrease of the light output is mainly attributed to the reduced light extraction efficiency when the pore depth stop at ITO transparent layer instead of p-type layer, while if the depth reach the MQWs, the deterioration of the QWs which is caused by dry etching damage will play an important role. This optimization would give a valuable guidance to the surface structure design for nanostructured GaN-based LEDs, such as surface roughening, photonic crystal, or top-down fabricated surface-plasmon enhanced LEDs. |
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| Keywords: | Gallium nitride Light-emitting diode Nanopore Dry etching Anodic aluminum oxide |
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