Effects of annealing temperature on the photoluminescence of RF sputtered Barium titanate thin films |
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| Affiliation: | 1. Department of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;2. Department of Electronics Engineering, Feng-Chia University, Taichung, Taiwan, ROC;1. Advanced Magnetics Group, Defence Metallurgical Research Laboratory, Hyderabad 500058, India;2. Advanced Materials Research Laboratory, Department of Physics, Indian Institute of Technology, Yeddumailaram, Medak 502205, India;1. Nanomaterials Research Laboratory (NRL), Department of Applied Sciences, Chitkara University, Rajpura 140401, Punjab, India;2. Punjab Technical University (PTU), Jalandhar 144601, India;3. Department of Physics, Panjab University, Chandigarh 160014, India;4. Department of Physics, G.G.D.S.D. College, Sector-32 C, Chandigarh 160030, India |
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| Abstract: | BaTiO3 thin films were deposited onto quartz substrates by an RF magnetron sputtering method. The films deposited at room temperature and annealed at 773–1173 K were characterized using X-ray diffraction (XRD)Scanning electron microscopy (SEM), UV–vis spectroscopy and Photoluminescence spectroscopy (PL). X-ray diffraction studies revealed that the film is amorphous in nature at 773 K and that the crystallinity increases with increase in annealing temperature. The average crystallite size of the films increased from 13–18 nm and the optical band gap decreased in the range of 4.33–3.43 eV, with increase in annealing temperature. The films exhibited good adherence to the substrates and the SEM images showed smooth surface morphology. Energy dispersive X-ray (EDX) analysis confirmed the presence of barium, titanium and oxygen in the film. The red-shifts of excitonic UV emission peaks were observed in all samples which can be attributed to the stress produced due to lattice distortions. The visible PL emission intensity showed appreciable enhancement with post-deposition annealing. |
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| Keywords: | Thin films RF magnetron sputtering Photoluminescence |
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