The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature |
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| Affiliation: | 1. Physics Department, Faculty of Sciences, Gazi University, Ankara, Turkey;2. Opticianry Department, Vocational School of Medical Sciences, Turgut Özal University, Ankara, Turkey;3. Department of Physics, Faculty of Sciences and Arts, Amasya University, Amasya, Turkey;1. Dokuz Eylul University, Faculty of Sciences, Physics Department, 35160 Buca, Izmir, Turkey;2. Yuzuncu Yil University, Faculty of Sciences, Physics Department - Zeve Campus, 65100 Van, Turkey;3. Adnan Menderes University, Faculty of Arts and Sciences, Physics Department, 09100 Aytepe, Aydin, Turkey;1. Department of Physics, COMSATS Institute of Information Technology , 44000 Islamabad, Pakistan;2. Department of Physics Simulation Lab, the Islamia University of Bahawalpur, 63100, Pakistan;3. Department of Electrical and Computer Engineering and MINT Center, The University of Alabama, Tuscaloosa, AL 35487, USA;4. Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan;5. Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore, Pakistan;6. National Centre for Physics, Islamabad, Pakistan;1. Department of Physics, University Amar Telidji of Laghouat, Laghouat 03000, Algeria;2. Laboratoire de Physique Théorique, Université de Tlemcen, B.P.230, 13000 Tlemcen, Algeria;3. Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, India;4. Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, Mascara 29000, Algeria;5. Materials Modeling Laboratory, Department of Physics, Islamia College University, Peshawar, Pakistan;6. Laboratoire des Matériaux Magnétiques, Université de Sidi Bel Abbés, Sidi Bel Abbés 22000, Alegria;7. Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University of Setif, 19000 Setif, Algeria;8. Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis, Malaysia;9. Physics Department, Faculty of Science, University of Sidi-Bel-Abbes, Sidi Bel Abbés 22000, Algeria;10. Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;11. School of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333, Czech Republic;1. Technical Inspection Engineering Department, Petroleum University of Technology, Abadan, Iran;2. Health, Safety and Environment (HSE) Engineering Office, NIOPDC, Yazd Region, Yazd, 89167-84395, Iran;3. Materials and Mining Engineering Department, Yazd University, Yazd, Iran;4. Department of Chemistry, Faculty of Science, Yazd University, Yazd 89195-741, Iran;5. COMSATS University, Lahore, Pakistan;6. KFUPM, Dhahran, Saudi Arabia;7. Materials Science and Engineering Department, Isfahan University of Technology, Isfahan 84156-83111, Iran;1. School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912, USA;2. Jožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia;3. Jožef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Slovenia |
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| Abstract: | The effect of Mo-doped and undoped PVC+TCNQ interfacial layer on electrical characteristics of a Au/PVC+TCNQ/p-Si structure was investigated using current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements at room temperature. The energy dependent interface states density (Nss) was obtained from the forward bias I–V data by taking into account voltage dependent effective barrier height (Φe) for two diodes, i.e. with and without Mo doping. The voltage dependent resistance (Ri) of structures was also obtained using Ohm׳s law and the method of Nicollian and Brews for the diodes. In order to eliminate the effect of series resistance (Rs), C and G/ω at high frequency values were corrected. Nss and Rs values were compared between the diodes and experimental results showed that Nss and Rs values of the Mo-doped PVC+TCNQ structure are considerably lower than those of the undoped PVC+TCNQ structure. The other important parameters such as ideality factor (n), reverse saturation current (Is), zero-bias barrier heights (ΦBo) and Rs were obtained from forward bias I–V data by using I–V, Cheung and Norde methods. Experimental results confirmed that the Mo-doped (PVC+TCNQ) layer considerably improved the performance of the Au/PVC+TCNQ/p-Si structure. |
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| Keywords: | Mo-doped (PVC+TCNQ) interfacial layer Energy density distribution profile of interface states Effect of Mo-doping on electrical characteristics Schottky barrier diodes (SBDs) |
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