Sputtered oxides used for passivation layers of amorphous InGaZnO thin film transistors |
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| Affiliation: | 1. School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia.;2. Faculty of Technology of São Paulo, São Paulo, Brazil;1. Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia;2. LUNAM, Université de Nantes, Moltech Anjou, CNRS, UMR 6200, FSTN, 2 Rue de la Houssinière, BP 92208, Nantes F-44322, France;1. School of Electronics and Electrical Engineering, Chuzhou University, Chuzhou 239000, PR China;2. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, PR China |
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| Abstract: | Four sputtered oxide films (SiO2, Al2O3, Y2O3 and TiO2) along with their passivating amorphous InGaZnO thin film transistors (a-IGZO TFTs) were comparatively studied in this paper. The device passivated by an Al2O3 thin film showed both satisfactory performance (μFE=5.3 cm2/V s, Ion/Ioff>107) and stability, as was probably related to smooth surface of Al2O3 thin films. Although the performance of the a-IGZO TFTs with a TiO2 passivation layer was also good enough (μFE=3.5 cm2/V s, Ion/Ioff>107), apparent Vth shift occurred in positive bias-stress tests due to the abnormal interface state between IGZO and TiO2 thin films. Sputtered Y2O3 was proved no potential for passivation layers of a-IGZO TFTs in this study. Despite unsatisfactory performance of the corresponding a-IGZO TFT devices, sputtered SiO2 passivation layer might still be preferred for its high deposition rate and excellent transparency which benefit the mass production of flat panel displays, especially active-matrix liquid crystal displays. |
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| Keywords: | Thin film transistor Amorphous InGaZnO Sputtered oxide passivation Bias stress effect |
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