Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals |
| |
| Affiliation: | 1. Department of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;2. Department of Electronics Engineering, Feng-Chia University, Taichung, Taiwan, ROC;1. Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt;2. Physics Department, Faculty of Science, King Faisal University, Al-Hassa 31982, P.O. 400, Saudi Arabia;3. Physics Department, Faculty of Education, Aden University, Lodar, Yemen;1. New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen, Czech Republic;2. Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis, Malaysia;1. Ostim Vocational School, Gazi University, 06500 Ankara, Turkey;2. Department of Physics, Faculty of Sciences, Ataturk University,25240 Erzurum, Turkey;3. Department of Physics Engineering, Faculty of Sciences, Istanbul Medeniyet University,34700 Istanbul, Turkey;1. Materials Science and Engineering, University of Arizona, Tucson, AZ, USA;2. Chemical and Environmental Engineering, University of Arizona, Tucson, AZ, USA;3. Applied Materials, Inc., Santa Clara, CA, USA;1. Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria;2. Institute of Electronics, Bulgarian Academy of Sciences, blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria |
| |
| Abstract: | This study investigates the effect of impact ionization using Ir, Pt, Pd, Ti gate metals and the direct correlation between these high work function metals and low frequency noise (LFN) on an In0.4Al0.6As/In0.4Ga0.6As metamorphic high electron mobility transistor (MHEMT). The effect of impact ionization on DC, RF, and cryogenic LFN is systematically studied and discussed. Gate metals with high work functions are used to suppress the kink effect and gate leakage current. Experimental results suggest that the Ir gate MHEMT exhibits superior thermal stable properties in a strong electrical field at various temperatures, associated with high gain, high current, and excellent low-frequency noise performance. |
| |
| Keywords: | MHEMT Flicker noise Impact ionization Kink effect |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
