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Nanocrystalline Si:H films made by inductively coupled plasma using internal low inductance antenna |
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| Affiliation: | 1. Department of Materials Engineering, Ming Chi University of Technology, Taipei 24301, Taiwan;2. Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taipei 24301, Taiwan;3. School of Physics, Beijing Institute of Technology, Beijing 102600, China;4. Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China |
| Abstract: | P-type hydrogenated nanocrystalline silicon (nc-Si:H) thin films are prepared on glass substrate by an inductively coupled plasma chemical vapor deposition system using multiple internal low inductance antenna units. The deposition rate as well as the microstructural and electrical properties of the nc-Si:H films are investigated systematically as functions of hydrogen dilution, discharge power and working distance. The effects of various process parameters are identified and rationalized. The applicability of this type of high density plasma to manufacture nc-Si:H films is critically assessed. |
| Keywords: | Low inductance antenna Inductively coupled plasma chemical vapor deposition nc-Si:H films |
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