Temperature dependent electrical and dielectric properties of a metal/Dy2O3/n-GaAs (MOS) structure |
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| Affiliation: | 1. Université de Sousse, Laboratoire Energie-Matériaux, Ecole Supérieure des Sciences et de la Technologie, Rue Lamine Abessi 4011, Hammam Sousse, Tunisia;2. Université de Sousse, Equipe de recherche caractérisations optoélectronique et spectroscopique des matériaux et nanomatériaux pour les télécommunications et capteurs, ISITCOM 4011, Hammam Sousse, Tunisia;3. Université de Tunis El Manar, LR: LAB MA03 Matériaux, Organisation et Propriétés, Faculté des Sciences de Tunis, Tunis 2092, Tunisia;4. Université de Gabès, Laboratoire de Physique des Matériaux et des Nanomatériaux Appliquée à l′Environnement, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig, 6072 Gabès, Tunisia;1. School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia.;2. Faculty of Technology of São Paulo, São Paulo, Brazil;1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;2. Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan;1. Center for Nuclear Radiation Detectors Research and Applications, BAIBU, 14280 Bolu, Turkey;2. Physics Department, Bolu Abant Izzet Baysal University, 14280 Bolu, Turkey;1. Center For Nuclear Radiation Detectors Research and Applications, AIBU, 14280 Bolu, Turkey;2. Physics Department, Abant Izzet Baysal University, 14280 Bolu, Turkey |
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| Abstract: | This paper describes the structural properties, electrical and dielectric characteristics of thin Dy2O3 layer deposited on the n-GaAs substrate by electron beam deposition under ultra vacuum. Structural and morphological characterizations are investigated by atomic force microscopy (AFM) and X-ray diffraction measurements (XRD). The XRD shows that the elaborated Dy2O3 oxide has a cubic structure. The electrical and dielectric properties of Co/Au/Dy2O3/n-GaAs structure were studied in the temperature range of 80–500 K. The conductance and capacitance measurements were performed as a function of bias voltage and frequency. The dielectric constant (ε′), dielectric loss (ε″) and dielectric loss tangent (tanδ) of the structure are obtained from capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. These parameters are found to be strong functions of temperature and bias voltage. A strong negative capacitance (NC) phenomenon has been observed in C–V; hence ε′–V plots for each temperature value take negative values. The following behavior of the C and ε′ in the forward bias region has been explained with the minority-carrier injection and relaxation theory. From DC conductance study, electronic conduction is found to be dominated by thermally activated hopping at high temperature. Activation energy is deduced from the variation of conductance with temperature. The interface state density (Nss) of the structure is of the order 1.13×1013 eV−1 cm−2. |
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| Keywords: | MOS structure Dysprosium oxide Negative capacitance Temperature dependence Voltage dependence Frequency dependence |
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