Influence of the nitrogen fraction on AlN thin film deposited by cathodic arc ion |
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| Affiliation: | 1. Department of Metallurgy and Materials Engineering (DMME), Pakistan Institute of Engineering and Applied Sciences (PIEAS), Islamabad, Pakistan;2. National Centre for Physics, Quaid-i-Azam University, Islamabad, Pakistan;1. School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia.;2. Faculty of Technology of São Paulo, São Paulo, Brazil;1. School of Science, Jiangnan University, Wuxi 214122, China;2. China Electronics Technology Group Corporation No. 38 Research Institute, Hefei 230088, China;3. Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;2. Department of Physics, Arab-American University, Jenin, Palestine;3. Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;1. Department of Physics & I3N, University of Aveiro, 3810-193 Aveiro, Portugal;2. Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’énergie, BP95, Hammam-Lif 2050, Tunisia;3. Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91 460 Marcoussis, France;1. National Institute of Materials Physics, P.O. Box MG-7, 77125 Bucharest-Magurele, Romania;2. National Institute for Laser, Plasma and Radiation Physics, 77125 Bucharest-Magurele, Romania;3. Bucharest University, Faculty of Physics, 077125 Bucharest-Magurele, Romania |
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| Abstract: | Thin films of aluminum nitride (AlN) have been grown, using the cathodic arc ion deposition technique. The effects of nitrogen fractions in the discharge on synthesized films growth rate, stoichiometric ratio (N/Al), crystal orientation and molecular mode of vibration have been investigated. AlN films have been studied by means of Rutherford backscattering (RBS) spectroscopy, X-ray diffraction (XRD), Fourier transforms infrared spectroscopy (FTIR), scanning electron microscope (SEM) and the four probe method. In RBS results, it has been found that growth rate and stoichiometric ratio decrease while reducing the nitrogen content in the synthesized chamber. XRD patterns indicated that films prepared in 100–85% nitrogen condition exhibit mixed phase of wurtzite+FFC, with preferential orientation along (002) corresponding to the hexagonal phase. It also demonstrated that at lower nitrogen environment, the transformation from mixed phase of wurtzite+FCC to a single phase of FCC–AlN occurs. FTIR spectroscopic analysis was employed to determine the nature of chemical bonding and vibrational phonon modes. Its spectra depicted a dominant peak around 850 cm?1 corresponding to the longitudinal optical (LO) mode of vibration. A shift in the LO mode peak toward lower wavenumbers was noticed with the decrease of nitrogen fraction, illustrating the decline of nitrogen concentration in the deposited AlN films. The 75% nitrogen fraction appeared critical for AlN film properties, such as shifting of mixed (wurtzite+FCC) phase to single FCC–Al(N), a sharp drop of stoichiometric ratio and deposition rate. Measurements of resistivity recorded by the four probe method depicted a sharp decline in the corresponding growth condition. |
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| Keywords: | AlN Cathodic arc ion XRD FTIR spectroscopy |
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