O2+CHCCl3氧化对6H-SiC MOS电容界面特性的改善

采用新颖的干O2 CHCCl3(TCE)氧化工艺，制备了P型和N型6H—SiCMOS电容器，并与常规热氧化工艺以及氧化加NO退火工艺进行了对比实验。结果表明，O2 TCE氧化不仅提高了氧化速率，而且降低了界面态密度和氧化层有效电荷密度，提高了器件可靠性。可以预测，O2 TCE氧化与湿NO退火相结合的工艺是一种有前途的制备高沟道迁移率、高可靠性SiCMOS—FET的栅介质工艺。

Improvements on Interface Properties of 6H-SiC MOS Capacitors by O2+CHCCl 3 Oxidation

A new process of growing SiO_2 on n- and p-type 6H-SiC wafers in dry O_2 + trichloroethylene(TCE)to prepare SiC MOS capacitors is presented. A comparison experiment is made between the new process and the conventional oxidation with or without nitric oxide(NO)annealing. It is demonstrated that the O_2+TCE oxidation can not only increase oxidation rate, but also decrease interface-state density and effective oxide-charge density, and enhance reliabilities of SiC MOS devices. It is predicted that O_2+TCE oxidation, combined with wet NO annealing, will become a promising gate dielectric process for high channel mobility and high reliability SiC MOSFET's.