| 衬底温度和氢气退火对ZnO:Al薄膜性能的影响 |
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| 引用本文： | 张惠,沈鸿烈,尹玉刚,李斌斌.衬底温度和氢气退火对ZnO:Al薄膜性能的影响[J].真空科学与技术学报,2010,30(1). |
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| 作者姓名： | 张惠 沈鸿烈 尹玉刚 李斌斌 |
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| 作者单位： | 南京航空航天大学,材料科学与技术学院,南京,210016 |
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| 基金项目： | 国家技术研究发展计划(863计划)资助项目 |
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| 摘 要： | 采用射频磁控溅射法在石英玻璃衬底上制备了性能良好的透明导电ZnO:Al薄膜,并研究了衬底温度和氢气退火对薄膜结构和光电性能的影响。结果表明,衬底加热可以改善薄膜结晶质量和c轴择优取向,减小内应力,并提高其电学性能。经稀释氢气退火后,500℃沉积的薄膜电阻率由9.4×10-4Ω.cm减小到5.1×10-4Ω.cm,迁移率由16.4cm2.V-1.s-1增大到23.3 cm2.V-1.s-1,载流子浓度由4.1×1020cm-3提高到5.2×1020cm-3,薄膜的可见光区平均透射率仍达85%以上。禁带宽度随着衬底温度的升高和氢气退火而展宽。
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| 关 键 词： | ZnO:Al薄膜 氢气退火 电阻率 光透过率 Burstein-Moss效应 |
Effects of Substrate Temperature and Hydrogen Annealing on Properties of ZnO:Al Films |
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| Zhang Hui,Shen Honglie,Yin Yugang,Li Binbin.Effects of Substrate Temperature and Hydrogen Annealing on Properties of ZnO:Al Films[J].JOurnal of Vacuum Science and Technology,2010,30(1). |
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| Authors: | Zhang Hui Shen Honglie Yin Yugang Li Binbin |
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| Affiliation: | Zhang Hui,Shen Honglie*,Yin Yugang,Li Binbin(College of Materials Science & Technology,Nanjing University of Aeronautics , Astronautics,Nanjing,210016,China) |
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| Abstract: | The transparent conductive ZnO:Al films were grown by RF magnetron sputtering on quartz substrates.The influence of the film growth conditions,such as the substrate temperature,and annealing in low hydrogen partial pressure,on the microstructures and properties of the ZnO:Al film was studied.The results show that the substrate temperature and hydrogen annealing strongly affect the crystal structure and properties of the films.For instance,after annealing in dilute hydrogen,the resistivity of the films,grown... |
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| Keywords: | ZnO:Al thin films Hydrogen annealing Electrical resistivity Transmittance Burstein-Moss effect |
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