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| 铬硅薄膜电阻的退火工艺条件研究 | |
| 引用本文： | 姚瑞楠,刘玉奎,崔伟.铬硅薄膜电阻的退火工艺条件研究[J].微电子学,2010,40(1). |
| 作者姓名： | 姚瑞楠 刘玉奎 崔伟 |
| 作者单位： | 1. 重庆邮电大学,光电工程学院,重庆,400065;模拟集成电路国家级重点实验室,重庆,400060 2. 模拟集成电路国家级重点实验室,重庆,400060;中国电子科技集团公司,第二十四研究所,重庆,400060 3. 中国电子科技集团公司,第二十四研究所,重庆,400060 |
| 摘 要： | 分析了CrSi薄膜电阻阻值的变化机理,并以此作为理论指导,开展退火工艺条件对铬硅薄膜电阻稳定性影响的实验,得到优化的退火工艺条件,可以使铬硅薄膜电阻的温度系数减小到±0.0001℃左右,大大提高了铬硅薄膜电阻的稳定性。 |
| 关 键 词： | 半导体工艺 铬硅电阻 退火条件 温度系数 |
Study on Annealing Conditions of CrSi Thin Film Resistors |
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| YAO Ruinan,LIU Yukui,CUI Wei.Study on Annealing Conditions of CrSi Thin Film Resistors[J].Microelectronics,2010,40(1). | |
| Authors: | YAO Ruinan LIU Yukui CUI Wei |
| Affiliation: | 1.Chongqing University of Posts and Telecommunications/a>;Chongqing 400065/a>;P.R.China/a>;2.National Lab of Analog IC/a>;Chongqing 400060/a>;3.Sichuan Institute of Solid State Circuits/a>;CETC/a>;P.R.China |
| Abstract: | Mechanism of resistance variation of CrSi thin-film resistor was analyzed. Experiments were made on effects of annealing conditions on the stability of CrSi thin-film resistors, and optimal annealing conditions were obtained. As a result, the temperature coefficient of CrSi thin-film resistors was reduced from 0.001 ℃ to ±0.0001 ℃, thus greatly improving the stability of CrSi thin-film resistors. |
| Keywords: | Semiconductor process CrSi resistor Annealing condition Temperature coefficient |
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