Semiconductor material assessment by scanning electron microscopy*

Considerable strides have been made in the application of the cathodoluminescent and beam-induced current modes of operation of the scanning electron microscope to the high resolution characterization of semiconductor materials. These techniques can be used to measure parameters such as resistivity, carrier concentration, mobility, composition, diffusion length, minority carrier lifetime, luminescence efficiency, dislocation density and temperature from regions of semiconductors as small as one micron across. The theoretical and experimental factors which limit the range of values over which measurements are possible and the accuracy attainable are discussed in detail. Each technique is illustrated by recent experimental results.