Effects of annealing of poly(3-hexylthiophene) film on the performance of double-layered EL devices of ITO/polymer/Alq3/Mg–Ag |
| |
| Affiliation: | 1. Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan;2. Department of Applied Physics, Faculty of Science, Fukuoka University, 8-19-1 Nanakuma, Jonan-Ku, Fukuoka 814-0180, Japan;3. Department of Applied Chemistry, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka 259-1292, Japan |
| |
| Abstract: | Double layer devices with a structure of ITO/pHT/Alq3/Mg–Ag (ITO = indium tin oxide, pHT = regio-regular or random poly(3-hexylthiophene), Alq3 = tris(8-hydroxyquinoline)aluminium) were fabricated. The device with a random pHT film emitted a green-yellow light in all voltage region, while that having a regio-regular pHT film exhibited a color change from green to red by applying the bias voltage higher than 15 V. Annealing the pHT films prepared on ITO at 200 °C for 1 h in nitrogen, prior to vapor-deposition of the Alq3 layer, improved the device performance with lowering the onset bias voltage by 2–3 V. The EL colors and spectra were also affected by annealing. X-ray reflectivity measurements before and after annealing the pHT film on ITO indicated increased density of the pHT layer and structural changes in the pHT/ITO interface by annealing, which seems to be responsible for the improved EL device performance. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
