CMOS implementation of a multiple-valued logic signed-digit fulladder based on negative-differentiaI-resistance devices

This paper presents a fully integrated implementation of a multivalued-logic signed-digit full adder (SDFA) circuit using a standard 0.6-μm CMOS process. The radix-2 SDFA circuit, based on two-peak negative-differentiaI-resistance (NDR) devices, has been implemented using MOS-NDR, a new prototyping technique for circuits that combine MOS transistors and NDR devices. In MOS-NDR, the folded current-voltage characteristics of NDR devices such as resonant-tunneling diodes (RTDs) are emulated using only nMOS transistors. The SDFA prototype has been fabricated and correct function has been verified. With an area of 123.75 by 38.7 μm² and a simulated propagation delay of 17 ns, the MOS-NDR prototype is more than 15 times smaller and slightly faster than the equivalent hybrid RTD-CMOS implementation