| 扩展电阻法测量亚微米器件的结深和杂质分布 |
| |
| 引用本文： | 张安康 王健华. 扩展电阻法测量亚微米器件的结深和杂质分布[J]. 电子器件, 1998, 21(3): 141-148 |
| |
| 作者姓名： | 张安康 王健华 |
| |
| 作者单位： | 东南大学无锡分校，华晶公司 |
| |
| 摘 要： | 本文介绍了亚微米器件结深和杂质分布的测量方法，叙述了扩展电阻法测量结深的原理，并对其测量结果进行了分析和讨论。
|
| 关 键 词： | 结深 扩展电阻 杂质分布 VLSI 亚微米器件 |
The Spreading Resistance Method for Measureing Impurity distribution and Junction Depth of Sub 100 nm Deep Base Transistor |
| |
| Zhang Ankang Li Wenyuan. The Spreading Resistance Method for Measureing Impurity distribution and Junction Depth of Sub 100 nm Deep Base Transistor[J]. Journal of Electron Devices, 1998, 21(3): 141-148 |
| |
| Authors: | Zhang Ankang Li Wenyuan |
| |
| Abstract: | In this paper. The measuring method of Impuriey distribution and junction depth of sub 100 nm deep base Transistor are presented. By use of spreading resistance technique. the principle of junctiondepth are described. The results are also analyzed and discussed. |
| |
| Keywords: | junction depth spreading resistance inpurity distribution |
| 本文献已被 CNKI 维普 等数据库收录！ |
