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| 溅射工艺参数对Ba0.5Sr0.5TiO3薄膜沉积速率和介电性能的影响 | |
| 引用本文： | 林明通,陈国荣,杨云霞,肖田,楼均辉.溅射工艺参数对Ba0.5Sr0.5TiO3薄膜沉积速率和介电性能的影响[J].真空,2005,42(6):39-42. |
| 作者姓名： | 林明通 陈国荣 杨云霞 肖田 楼均辉 |
| 作者单位： | 1. 华东理工大学材料科学与工程学院,上海,200237;上海广电电子股份有限公司平板中心,上海,200081 2. 华东理工大学材料科学与工程学院,上海,200237 3. 上海广电电子股份有限公司平板中心,上海,200081 |
| 摘 要： | 铁电/介电BST(BaxSr1-xTiO3)薄膜在微电子学、集成光学和光电子学等新技术领域有广泛的应用前景.用射频磁控溅射方法制备了厚约700 nm的Ba0.5Sr0.5TiO3薄膜,采用Al/BST/ITO结构研究了溅射功率、溅射气压、O2/(Ar O2)比和基片温度对上述BST薄膜沉积速率和介电性能的影响,并根据这些结果分析了较优的工艺条件,同时用XRD、XPS和SEM研究了薄膜的晶相、组成和显微结构. |
| 关 键 词： | 射频磁控溅射 Ba0.5Sr0.5TiO3薄膜 沉积速率 介电常数 击穿场强 品质因子 |
| 文章编号： | 1002-0322（2005）06-0039-04 |
| 收稿时间： | 2005-04-01 |
| 修稿时间： | 2005-04-01 |
Effect of sputtering process on deposition rate and dielectrical properties of Ba0.5Sr0.5TiO3 thin films |
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| LIN Ming-tong,CHEN Guo-rong,YANG Yun-xia,XIAO Tian,LOU Jun-hui.Effect of sputtering process on deposition rate and dielectrical properties of Ba0.5Sr0.5TiO3 thin films[J].Vacuum,2005,42(6):39-42. | |
| Authors: | LIN Ming-tong CHEN Guo-rong YANG Yun-xia XIAO Tian LOU Jun-hui |
| Abstract: | Ferroelectric/dielectric BST(Ba_xSr_(1-x)TiO_3)thin films have broadly prospective applications in new technology fields,such as microelectronics,integrated optics and photo electronics.The Ba_(0.5)Sr_(0.5)TiO_3 thin films about 700 nm thick were prepared by rf magnetron sputtering process,using an Al/BST/ITO architecture to investigate the impact of sputtering power,gas pressure,O_2/(Ar+O_2) ratio and substrate temperature on the deposition rate and dielectric properties of the BST thin films.An optimal process was thus concluded from the investigation results with XRD,XPS and SEM used to analyze the crystalline phase,composition and microstructure of the films deposited by the optimum process. |
| Keywords: | radio frequency magnetron sputter Ba0 5Sr0 5TiO3 thin film deposition rate dielectric constant break-down field strength figure of merit |
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