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Electrochemical characterization of copper deposited on plasma and thermally modified titanium surfaces
Authors:K S Teng  J -L Delplancke  J Zhang  T J O’Keefe
Affiliation:(1) Integration Engineer with Winbond Electronics Corp., Taipei, Taiwan;(2) Department of Metallurgie-Electrochimie, the Universite Libre de Bruxelles, B-1050 Bruxelles, Belgium;(3) Caterpillar, 61656 Peoria, IL;(4) Department of Metallurgical Engineering and the Materials Research Center, University of Missouri-Rolla, 65409-1170 Rolla, MO
Abstract:Thin oxide films were grown at temperatures from 373 to 1073 K in plasma and in air on commercially pure titanium substrates. It was determined that the color, thickness, composition, phase, and polarization behavior in a copper electrolyte varied with operating conditions: temperature, oxygen partial pressure, and plasma composition. High-temperature and high oxygen partial pressure plasma produced a thick oxide film. The surface film structure transformed from TiO2 (anatase) to TiO2 (rutile) at a temperature of 600 °C. A lower oxide of the form Ti n O2n−1, such as Ti2O3 (which may be porous) or possibly Ti3O5, was formed on a thermally treated sample (400 °C, 80 mtorr O2, 3 hours). This sample exhibited the lowest potential for copper nucleation and gave a very uniform, smooth, and hole-free copper foil.
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