| BSIM4和ULTRA-BULK模型对称性和连续性的检验 |
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| 引用本文： | 牛旭东,李博,宋岩,张立宁,何进. BSIM4和ULTRA-BULK模型对称性和连续性的检验[J]. 半导体学报, 2009, 30(3): 034006-4 |
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| 作者姓名： | 牛旭东 李博 宋岩 张立宁 何进 |
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| 作者单位： | Micro;Nano;Electric;Device;Integrated;Group;Laboratory;Microsystems;Peking;University;Shenzhen;Graduate;School;TSRC;Microelectronics;Devices;Circuits;Ministry;Education;Electronics;Computer;Science; |
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| 摘 要： | 本文以对比的形式用GUMMEL对称测试电路的模拟结果检验了伯克利大学的BSIM4和北京大学的ULTRA-BULK两个CMOS器件模型的对称性和连续性特性。SPICE模拟结果表明: 工业标准模型BSIM4在电荷，电流高阶导数以及电容等的连续性和对称性上具有一系列的缺陷，而最新发展的基于表面势的MOSFET解析模型ULTRA-Bulk却表现出必需的连续性和对称性. 既然这些属性对于模拟电路和射频电路设计都是非常重要的, 那么新一代CMOS模型采用基于表面势的各种MOSFET解析模型将是必然的发展.
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| 关 键 词： | 解析模型，BSIM，ULTRA-BULK，电路设计和模拟，连续性，对称性 |
| 收稿时间： | 2008-05-20 |
Benchmarktests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK |
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| Niu Xudong,Li Bo,Song Yan,Zhang Lining and He Jin. Benchmarktests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK[J]. Chinese Journal of Semiconductors, 2009, 30(3): 034006-4 |
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| Authors: | Niu Xudong Li Bo Song Yan Zhang Lining He Jin |
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| Affiliation: | Micro and Nano Electric Device and Integrated Group, The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055,China;TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education,;Micro and Nano Electric Device and Integrated Group, The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055,China;TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education,;TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education, School of Electronics and Computer Science, Peking University, Beijing 100871, China;TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education, School of Electronics and Computer Science, Peking University, Beijing 100871, China;Micro and Nano Electric Device and Integrated Group, The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055,China;TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education, |
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| Abstract: | This paper presents the benchmark test results on the symmetry and continuity characteristics between BSIM4 from Berkeley and ULTRA-BULK from Peking University. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while the latest advanced surface-potential based MOSFET compact model, ULTRA-BULK, demonstrates all necessary continuity and symmetry characteristics, which are very important for analog and RF circuit design. |
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| Keywords: | compact model BSIM4 ULTRA-BULK circuit design continuity symmetry |
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