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Half-bridge inverter using 4H-SiC gate turn-off thyristors
Authors:Tipton  CW Bayne  SB Griffin  TE Scozzie  CJ Geil  B Agarwal  AK Richmond  J
Affiliation:US Army Res. Lab., Adelphi, MD;
Abstract:This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm2) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices
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