| 通过优化额外的硼注入工艺减小STI对SONOS存储器的影响 |
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| 引用本文： | 徐跃,闫锋,李志国,杨帆,王永刚,常建光. 通过优化额外的硼注入工艺减小STI对SONOS存储器的影响[J]. 半导体学报, 2010, 31(9): 094003-4 |
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| 作者姓名： | 徐跃 闫锋 李志国 杨帆 王永刚 常建光 |
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| 作者单位： | College of Electronic Science & Engineering;Nanjing University of Posts and Telecommunications;Nanjing University;Semiconductor Manufacturing International(Shanghai) Corporation; |
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| 摘 要： | The influence of shallow trench isolation (STI) on a 90 nm polysilicon–oxide–nitride–oxide–silicon structure non-volatile memory has been studied based on experiments. It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably. The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem. In order to mitigate the STI impact, an added boron implantation in the STI region is developed as a new solution. Four kinds of boron implantation experiments have been implemented to evaluate the impact of STI on edge cells, respectively. The experimental results show that the performance of edge cells can be greatly improved through optimizing added boron implantation technology.
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| 关 键 词： | 离子注入技术 性传播疾病 硼分离 记忆体 SONOS 优化 硼离子注入 硅氧化物 |
Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology |
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| Xu Yue,Yan Feng,Li Zhiguo,Yang Fan,Wang Yonggang and Chang Jianguang. Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology[J]. Chinese Journal of Semiconductors, 2010, 31(9): 094003-4 |
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| Authors: | Xu Yue Yan Feng Li Zhiguo Yang Fan Wang Yonggang Chang Jianguang |
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| Affiliation: | College of Electronic Science & Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;College of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China;College of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China;Semiconductor Manufacturing International (Shanghai;Semiconductor Manufacturing International (Shanghai;Semiconductor Manufacturing International (Shanghai;Semiconductor Manufacturing International (Shanghai |
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| Abstract: | The influence of shallow trench isolation(STI) on a 90 nm polysilicon-oxide-nitride-oxide-silicon structure non-volatile memory has been studied based on experiments.It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably.The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem.In order to mitigate the STI impact,an added boron implantation in the STI region is developed as a new solution.Four kinds of boron imp... |
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| Keywords: | shallow trench isolation compressive stress boron segregation added boron implantation |
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