| 硼离子注入退火过程对表面迁移率及薄层电阻的影响 |
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| 引用本文： | 汤庭鳌,卡洛斯·艾劳休,李倩.硼离子注入退火过程对表面迁移率及薄层电阻的影响[J].固体电子学研究与进展,1988(1). |
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| 作者姓名： | 汤庭鳌 卡洛斯·艾劳休 李倩 |
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| 作者单位： | 复旦大学，科罗拉多短夭学，复旦大学 美 |
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| 摘 要： | 本文利用与退火条件有关的离子注入杂质分布,得到了在硅中硼离子注入退火条件对载流子表面迁移率的影响。还得到了硼离子注入薄层电阻与注入条件及退火情况的关系。在这些关系中,注入剂量对迁移率及薄层电阻有最主要的影响。这些结果可在设计和制造VLSI中用以确定工艺条件。
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The Influence of Boron Ion Implanted Annealing Process on Surface Mobility and Sheet Resistance |
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| Abstract: | An annealing-related doping profile of boron ion implantation is used to obtain the relationship between the surface mobility of carries an annealing condition and the dependenc of the sheet resistance of boron ion implantation on the conditions of implantation and annealing. Of all these factors, the implantation dose has the most significant influence on mobility and sheet resistance. These results are benifical to determine the processing conditions in the design and the fabrication of VLSI. |
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