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Vertical single-crystal ZnO nanowires grown on ZnO:Ga/glass templates
Authors:Cheng-Liang Hsu Shoou-Jinn Chang Hui-Chuan Hung Yan-Ru Lin Chorng-Jye Huang Yung-Kuan Tseng Chen   I.-C.
Affiliation:Dept. of Electron. Eng., Ming Chi Univ. of Technol., Taipei, Taiwan;
Abstract:Vertical single-crystal ZnO nanowires with uniform diameter and uniform length were selectively grown on ZnO:Ga/glass templates at 600/spl deg/C by a self-catalyzed vapor-liquid-solid process without any metal catalyst. It was found that the ZnO nanowires are grown preferred oriented in the [002] direction with a small X-ray diffraction full-width half-maximum. Photoluminescence, field-emission scanning electron microscopy, and high-resolution transmission electron microscopy measurements also confirmed good crystal quality of our ZnO nanowires. Field emitters using these ZnO nanowires were also fabricated. It was found that threshold field of the fabricated field emitters was 14 V//spl mu/m. With an applied electric field of 24 V//spl mu/m, it was found that the emission current density was around 0.1 mA/cm/sup 2/.
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