Al-doping effects on the photovoltaic performance of inverted polymer solar cells |
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| Authors: | YU Xuan SHI Ya-feng YU Xiao-ming ZHANG Jian-jun GE Ya-ming CHEN Li-qiao PAN Hong-jun |
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| Affiliation: | Innovation Application Institute, Zhejiang Ocean University, Zhoushan 316004, China;College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China;School of Mathematics and Statistics, Kashgar University, Kashgar 844007, China;Innovation Application Institute, Zhejiang Ocean University, Zhoushan 316004, China;College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China;College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China;Innovation Application Institute, Zhejiang Ocean University, Zhoushan 316004, China;Innovation Application Institute, Zhejiang Ocean University, Zhoushan 316004, China;Innovation Application Institute, Zhejiang Ocean University, Zhoushan 316004, China |
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| Abstract: | The properties of Al-doped ZnO (AZO) play an important role in the photovoltaic performance of inverted polymer solar cells (PSCs), which is used as electron transport and hole blocking buffer layers. In this work, we study the effects of Al-doping level in AZO on device performance in detail. Results indicate that the device performance intensely depends on the Al-doping level. The AZO thin films with Al-doping atomic percentage of 1.0% possess the best conductivity. The resulting solar cells show the enhanced short current density and the fill factor (FF) simultaneously, and the power conversion efficiency (PCE) is improved by 74%, which are attributed to the reduced carrier recombination and the optimized charge transport and extraction between AZO and the active layer. |
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