| N-polar GaN基HEMT准二维电荷传输模型仿真 |
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| 引用本文： | 王现彬,赵正平.N-polar GaN基HEMT准二维电荷传输模型仿真[J].材料导报,2016,30(6):133-136. |
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| 作者姓名： | 王现彬 赵正平 |
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| 作者单位： | 1. 石家庄学院物理与电气信息工程学院,石家庄 050000;河北工业大学信息工程学院,天津 300130;2. 河北工业大学信息工程学院,天津,300130 |
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| 基金项目： | 河北省科技计划项目(F2013106079;15210606);石家庄市科学技术研究与发展指导计划项目(11113481);石家庄学院校级科研平台项目(XJPT002) |
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| 摘 要： | 建立了氮极性(N-polar)GaN基HEMT器件的准二维(Quasi-2-D)电荷传输模型,仿真研究了N-polar GaN基HEMT的直流特性。仿真结果表明,不同的极化效应会对输出特性曲线和转移特性曲线产生不同的影响,考虑自发极化效应(Psp)+压电极化效应(Ppe)、只考虑Ppe和只考虑Psp三种情况下的阈值电压分别为:-3.96V、-2.29V和-2.47V,而其对应的峰值跨导则分别为44mS/mm、41.2mS/mm和41.3mS/mm。该模型为N-polar GaN基HEMT器件仿真提供了理论参考。
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| 关 键 词： | N极性 高电子迁移率晶体管 极化效应 直流特性 |
Charge Transport Simulation for N-polar GaN-based HEMT with a Quasi Two-dimensional Model |
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| WANG Xianbin,ZHAO Zhengping.Charge Transport Simulation for N-polar GaN-based HEMT with a Quasi Two-dimensional Model[J].Materials Review,2016,30(6):133-136. |
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| Authors: | WANG Xianbin ZHAO Zhengping |
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| Abstract: | The quasi two-dimensional (quasi-2-D) charge transport model of N-polar GaN based HEMT was established, and DC characteristics were simulated by quasi-2-D model. Simulation results show that different polarization effect would produce different output characteristic curve and transfer characteristic curve. The threshold vol-tage was respectively -3.96 V,-2.29 V and -2.47 V,considering Psp+Ppe, only Ppe and only Psp, and the corresponding peak transconductance was respectively 44 mS/mm, 41.2 mS/mm and 41.3 mS/mm. This model provides a theoretical reference for computational simulation of N-polar GaN based HEMT. |
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| Keywords: | N-polar high electron mobility transistor polarization effect DC characteristics |
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