| （英）界面极化层引起P(VDF-TrFE)电容器的电容-电压的不对称 |
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| 引用本文： | 刘伯路,田博博,赵晓林,王建禄,孙硕,沈宏,孙璟兰,孟祥建,褚君浩. （英）界面极化层引起P(VDF-TrFE)电容器的电容-电压的不对称[J]. 红外与毫米波学报, 2016, 35(2): 143-146 |
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| 作者姓名： | 刘伯路 田博博 赵晓林 王建禄 孙硕 沈宏 孙璟兰 孟祥建 褚君浩 |
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| 作者单位： | 中科院上海技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所 |
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| 基金项目： | Grant No. 2013CB922302；Grants No. 11374320 and No. 11104301；13JC1406000 and 14JC1406500 |
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| 摘 要： | 通过研究Au/P(VDF-TrFE)/Al 电容器的变温(200 K 到310 K)电容-电压曲线,室温下观察到两个极化方向下的电容不对称,这个现象可以应用于非挥发性存储器.电容不对称程度随着温度的降低而变小,当温度低于230 K,电容不对称现象消失.P(VDF-TrFE)与Al电极之间的界面极化层可以解释观察到的电容不对称现象.
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| 关 键 词： | P(VDF-TrFE)；电容器；存储；畴壁 |
| 收稿时间： | 2015-08-27 |
| 修稿时间： | 2015-12-21 |
Asymmetric capacitance-voltage curves induced by pinned interface dipoles in poly(vinylidene fluoride/trifluoroethylene) capacitor |
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| LIU Bo-Lu,TIAN Bo-Bo,ZHAO Xiao-Lin,WANG Jian-Lu,SUN Shuo,SHEN Hong,SUN Jing-Lan,MENG Xiang-Jian and CHU Jun-Hao. Asymmetric capacitance-voltage curves induced by pinned interface dipoles in poly(vinylidene fluoride/trifluoroethylene) capacitor[J]. Journal of Infrared and Millimeter Waves, 2016, 35(2): 143-146 |
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| Authors: | LIU Bo-Lu TIAN Bo-Bo ZHAO Xiao-Lin WANG Jian-Lu SUN Shuo SHEN Hong SUN Jing-Lan MENG Xiang-Jian CHU Jun-Hao |
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| Affiliation: | shanghai institute of technical physics,shanghai institute of technical physics,shanghai institute of technical physics,shanghai institute of technical physics,shanghai institute of technical physics,Shanghai Institute of Technical Physics,shanghai institute of technical physics,jlsun@mail.sitp.ac.cn,jlsun@mail.sitp.ac.cn |
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| Abstract: | The capacitance-voltage (C-V) curves of Au/P(VDF-TrFE)/Al capacitor were investigated from 200 K to 310 K. An asymmetry of capacitance value at 0 bias voltage under two polarization orientations was observed at room temperature region, which can be applied in the field of non-volatile memory. The capacitance asymmetry decays with reduced temperature and disappears as the temperature is below 230 K. The phenomena is attributed to a pinned dipole layer between P(VDF-TrFE) films and Al metal electrode. |
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| Keywords: | P(VDF-TrFE) capacitor memory domain walls |
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