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Control of Magnetic Properties in (Cd,Mn)Te Quantum Wells Inserted in Pin Diodes

Authors:	H. Boukari, M. Bertolini, D. Ferrand, J. Cibert, S. Tatarenko, J. Wró bel, M. Sawicki, P. Kossacki, A. Wasiela, J. A. Gaj T. Dietl

Affiliation:	(1) CEA-CNRS-UJF Grenoble Group nanostructures and semiconductors,, Laboratoire de Spectrométrie Physique, Boîte Postale 87, F-38402 Saint Martin d'Héres Cedex, France;(2) Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warszawa, Poland;(3) Institute of Experimental Physics, Warsaw University, Hoa 69, PL-00-681 Warszawa, Poland

Abstract:	Using photoluminescence and photoluminescence excitation, weinvestigate the magnetic properties of (Cd,Mn)Te quantum wells inserted in pin diodes. Such structures give us the opportunity to tune the carrier density by applying a bias of the order of 1 V. Results obtained in a small magnetic field show the presence of magnetic domains, which persist as long as the quantum well is populated.

Keywords:	photoluminescence photoluminescence excitation pin diodes semi-transparent
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