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Correlation between Morphological Structure and Optoelectronic Properties of Al2O3 thin layer coated silicon nanowires |
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| Authors: | Hajjaji A. Amri C. Rebhi A. Gaidi M. Ouertani R. Amlouk M. Bessais B. El Khakani M. A. |
| Affiliation: | 1.Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050, Hammam-Lif, Tunisia ;2.Institut National de la Recherche Scientifique, INRS-Énergie, Matériaux et Télécommunications, 1650, Blvd. Lionel-Boulet, Varennes, QC, J3X-1S2, Canada ;3.Laboratory of Semi-Conductors, Nano-Structures and Advanced Technologies, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050, Hammam-Lif, Tunisia ;4.Center of Advanced Research Materials, Research Institute of Sciences and Engineering, University of Sharjah, P.O. Box 27272, Sharjah, United Arab Emirates ;5.Laboratory of Nanomaterials, Nanotechnology and Energy (L2NE), Faculty of Sciences of Tunisia, El Manar University, 2092, Tunis, Tunisia ; |
| Abstract: | Silicon - This study reports on correlation between morphological structure and optoelectronic properties of Al2O3/silicon nanowires (SiNWs). The SiNWs were prepared from etching a silicon... |
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