| 一种具有高正向阻断电压及优良开关特性的新型静电感应晶闸管 |
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| 引用本文： | 张彩珍,王永顺,刘春娟,汪再兴.一种具有高正向阻断电压及优良开关特性的新型静电感应晶闸管[J].半导体学报,2010,31(3):034005-4. |
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| 作者姓名： | 张彩珍 王永顺 刘春娟 汪再兴 |
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| 作者单位： | School;Electronic;Information;Engineering;Lanzhou;Jiaotong;University; |
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| 基金项目： | supported by the Scientific and Technological Development Plan of Lanzhou City of China(No.2009-1-1). |
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| 摘 要： | 设计并构造了一种具有条状阳极P-缓冲层结构（SAP-B）的新型静电感应晶闸管。该结构以具有p- 缓冲层和嵌入p+发射区（条状阳极区）的弱掺杂n-发射区（泄漏阳极区）为特点。与传统扩散源区埋栅结构相比，SAP-B结构可进一步简化工艺，并将扩散源区埋栅结构静电感应晶闸管的正向阻断电压从1000V提高至1600V，阻断增益从40提高至70，同时将关断时间从0.8μs降低至0.4μs。
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| 关 键 词： | 静电感应晶闸管 开关性能 高电压 正向阻断电压 制作过程 层结构 缓冲层 SAP |
A new static induction thyristor with high forward blocking voltage and excellent switching performances |
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| Zhang Caizhen,Wang Yongshun,Liu Chunjuan and Wang Zaixing.A new static induction thyristor with high forward blocking voltage and excellent switching performances[J].Chinese Journal of Semiconductors,2010,31(3):034005-4. |
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| Authors: | Zhang Caizhen Wang Yongshun Liu Chunjuan and Wang Zaixing |
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| Affiliation: | School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China |
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| Abstract: | A new static induction thyristor(SITH) with a strip anode region and p~-buffer layer structure(SAP~-B) has been successfully designed and fabricated.This structure is composed of a p~-buffer layer and lightly doped n~- regions embedded in the p~+-emitter.Compared with the conventional structure of a buried-gate with a diffused source region(DSR buried-gate),besides the simple fabrication process,the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V,the bloc... |
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| Keywords: | static induction thyristor strip anode region and p- buffer layer structure forward blocking voltage turn-off time |
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