| Si3N4薄膜的表面微观特性 |
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| 引用本文： | 陈俊芳,吴先球,王德秋,丁振峰,任兆杏.Si3N4薄膜的表面微观特性[J].功能材料,2001,32(3):298-300. |
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| 作者姓名： | 陈俊芳 吴先球 王德秋 丁振峰 任兆杏 |
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| 作者单位： | 1. 华南师范大学,物理系,
2. 中国科学院,等离子体物理研究所, |
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| 基金项目： | 广东省自然科学基金(000675);省高教厅科研基金(06204)和中国博士后科学基金[1997](7)资助课题 |
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| 摘 要： | 利用偏心静电单探针诊断了反应室内的等离子体密度的空间分布；在不同的工艺条件下制备了Si3N4薄膜，由STM和Telystep-Hobbso轮廓仪研究了ECR－PECVD制备的Si3N4薄膜的表面微观特性，分析了沉积温度对ECR－PECVD制备的Si3N4薄膜表面平整度特性影响的物理机理；结果表明ECR－PECVD制备的薄膜是一种表面均匀致密的纳米Si3N4薄膜。
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| 关 键 词： | 氮化硅薄膜 表面平整度 沉积温度 纳米薄膜 |
| 文章编号： | 1001-9731(2001)03-0298-03 |
| 修稿时间： | 2000年3月2日 |
Surface microcosmic properties of the nanosized silicon nitride thin film prepared by ECR-PECVD |
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| CHEN Jun-fang,WU Xian-qiu,WANG De-qiu,DING Zhen-feng,REN Zhao-xing.Surface microcosmic properties of the nanosized silicon nitride thin film prepared by ECR-PECVD[J].Journal of Functional Materials,2001,32(3):298-300. |
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| Authors: | CHEN Jun-fang WU Xian-qiu WANG De-qiu DING Zhen-feng REN Zhao-xing |
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| Abstract: | The spatial distribution of the ECR plasma density has been measured by using a eccentric langmuir probe. The silicon nitride thin film is prepared by ECR-PECVD at different deposition temperature. The surface microcosmic properties of silicon nitride thin film prepared by ECR-PECVD is studied with the scanning tunnel microscopy (STM) and Telystep-Hobbso profilometer. It is analyzed that the physical mechanism of effect of deposition temperature for the surface planeness of Si3 N4 thin film. The result indicate that the Si3N4 thin film prepared by ECR-PECVD is a kind of nano-Si3N4 thin film of uniform and density. |
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| Keywords: | Si3N4 thin film surface planeness deposition temperature |
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