一种新的SOI波导拉曼激光器模型及其应用

通过考虑腔中的自发拉曼散射，提出一种新的绝缘体上硅(SOI)波导拉曼激光器物理模型。仿真结果表明该模型能较好地描述其小信号输出特性，实现对该类激光器的快速分析、设计与优化。利用模型对基于多种SOI波导的拉曼激光器进行分析，结果表明室温下只有采用拥有较大拉曼系数，较小线性损耗和较短的有效载流子寿命的SOI波导才能使拉曼激光器达到阈值。提出采用优化SOI波导截面几何尺寸的方法来降低有效载流子寿命，进而提高整体拉曼增益。结果显示该方法可大幅提高SOI波导拉曼激光器的输出功率和能量转换效率。

A novel model for SOI waveguide Raman lasers and its applications

An improved model is proposed to describe silicon-on-insulator (SOI) waveguide Raman lasers by considering the spontaneous Raman scattering effect. Numerical results indicate that our proposed model can well describe small-signal SOI waveguide Raman lasers and estimates the laser threshold. By using physical parameters of real SOI waveguides, we analyzed SOI waveguide Raman lasers. The results indicate the key to reach the laser thresholds in room temperature is a waveguide with large Raman coefficient, low loss, and short effective free carrier lifetime. We also proposed that by optimizing the transverse geometric size, a high overall Raman gain can be achieved in SOI waveguides with small effective mode area and short effective carrier lifetime which can increase the output power and the conversion efficiency of SOI waveguide Raman lasers.