| LED光电器件的性能调控 |
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| 引用本文： | 姚惠林,路纲,宋丽君,王波.LED光电器件的性能调控[J].量子电子学报,2016,33(3):301-305. |
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| 作者姓名： | 姚惠林 路纲 宋丽君 王波 |
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| 作者单位： | 洛阳理工学院电气工程与自动化学院， 河南 洛阳 471023 |
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| 基金项目： | Supported by Key Scientific Research Projects in Colleges and Universities of He'nan Educational Department (河南省教育厅高等学校重点科研项目 |
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| 摘 要： | 制备了具有高量子效率的发光二极管(LED)器件。对于LED光电器件提高辐射复合速率有利于缓解电子泄露，增加了LED的发光功率，缓解了LED在大电流下的效率下降问题。本文通过采用InGaN/GaN作为LED的垒层，减小由极化引起的静电场，增大电子和空穴波函数的交叠比，从而增大了辐射复合速率。
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| 关 键 词： | 高量子效率，发光二极管，电子阻挡层 |
| 收稿时间： | 2015-03-11 |
| 修稿时间： | 2015-06-23 |
Performance improvement of LED photoelectric devices |
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| Abstract: | The advantages of InGaN based light-emitting diodes with InGaN/GaN barriers are studied. It is found that the structure with InGaN/GaN barriers shows improved light output power, lower current leakage, and less efficiency droop over its conventional InGaN/GaN counterparts. These improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells (QWs) when the InGaN/GaN barriers are used. |
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| Keywords: | optoelectronics quantum efficiency efficiency drop electron blocking layer |
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