Kinetics of disilicide layer growth at the interface of tungsten with molten copper, silver, and tin saturated with silicon

The kinetics of WS₂ layer growth at the interface of tungsten with molten metals saturated with silicon is studied. Research is performed at 1200°C using melts based on copper, silver, and tin. It was established that WSi₂ layer growth in these melts obeys a “parabolic” rule but the corresponding growth rate constants differ markedly, i.e., from 3.4·10^?11 m²/sec (melt based on copper) to 1.5·10^?13 m²/sec (melts based on silver and tin). The reasons for this difference are discussed.