A low power RFID based energy harvesting temperature resilient CMOS-only reference voltage |
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| Affiliation: | 1. Department of Engineering, University of Perugia, Terni, Italy;2. DIEM, University of Salerno, Fisciano (SA), Italy;3. DIMES, University of Calabria, Rende (CS), Italy;1. Department of Electrical and Electronics Engineering, Iran University of Science and Technology (IUST), Tehran, Iran;1. Microelectronics School, Xidian University, Xi’an 710071, PR China;2. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, PR China;1. Department of Electronic and Information Technology, Jiangmen Polytechnic, Jiangmen, 529000, PR China;2. China Mobile Communications Corporation, Jiangmen, 529000, PR China;1. ETH Zurich, Switzerland;2. NXP Semiconductors, Netherlands;3. University of Bologna, Italy |
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| Abstract: | In this work a low power consumption reference voltage in commercial 40 nm technology is proposed. It adopts a new approach to produce a temperature invariant reference voltage for outdoor RFID applications. To do so, the positive temperature coefficient (TC) of the produced output voltage of a Dickson charge pump is used to cancel out the negative temperature coefficient of the threshold voltage (Vth) of CMOS devices. The result is, according to the post-layout Cadence simulation, a 1.224 V reference voltage with a TC of 60 ppm°C−1 in the temperature range of −10 °C to 125 °C. The circuit consumes 7 nW with an active area of 0.00033 mm2. |
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