Investigations of strength of copper-bonded wafers with several quantitative and qualitative tests |
| |
| Authors: | K. N. Chen S. M. Chang L. C. Shen R. Reif |
| |
| Affiliation: | (1) Microsystems Technology Laboratories, Massachusetts Institute of Technology, 02139 Cambridge, MA;(2) Packaging Process Tech. Division, Advanced Packaging Technology Center (APC), Electronics Research and Service Organization, Industrial Technology Research Institute (ERSO/ITRI), Hsinchu, Taiwan;(3) Present address: IBM T.J. Watson Research Center, 10598 Yorktown Heights, NY |
| |
| Abstract: | The strengths of Cu-bonded wafers with respect to different bonding temperatures and bonding durations by quantitative and qualitative approaches were reviewed and investigated. These investigations include the mechanical dicing test, the tape test, the pull test, and the push test. For all test results, the strength of Cu-bonded wafers increases with increases in bonding duration or bonding temperature. Thermal anneal after bonding improved the bonding strength only at the high bonding temperature and not at the low temperature. |
| |
| Keywords: | Wafer bonding bond strength copper |
| 本文献已被 SpringerLink 等数据库收录！ |
|
